US Patent Issued to Tokyo Electron on June 24 for "Plasma processing apparatus and plasma processing method" (Japanese Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,340,986, issued on June 24, was assigned to Tokyo Electron Ltd. (Tokyo).

"Plasma processing apparatus and plasma processing method" was invented by Hiroyuki Matsuura (Iwate, Japan) and Takeshi Ando (Yamanashi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma processing apparatus includes a cylindrical processing chamber with a sidewall having an opening, to accommodate substrates on respective stages. The plasma processing apparatus includes a plasma compartment wall with an outer surface, the plasma compartment wall being hermetically provided at the sidewall of the processing chamber to close the opening of the sidewall of the processing ...