ALEXANDRIA, Va., June 25 -- United States Patent no. 12,341,006, issued on June 24, was assigned to Tokyo Electron Ltd. (Tokyo).

"Heat treatment method and heat treatment apparatus" was invented by Hiroyuki Matsuura (Iwate, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A heat treatment method includes: forming an amorphous silicon film having a hydrogen concentration in a film of 5x1019 atoms/cm3 or more, on a substrate; and irradiating the substrate with microwaves to heat the amorphous silicon film thereby forming a polycrystalline silicon film from the amorphous silicon film."

The patent was filed on Aug. 14, 2020, under Application No. 16/993,500.

*For further information, including images, char...