US Patent Issued to Tokyo Electron on June 17 for "Substrate processing method and substrate processing device" (Japanese Inventor)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,331,403, issued on June 17, was assigned to Tokyo Electron Ltd. (Tokyo).

"Substrate processing method and substrate processing device" was invented by Munehito Kagaya (Nirasaki, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A substrate processing method and a substrate processing device capable of obtaining good embedding characteristics are provided. The substrate processing method includes: embedding a first insulating film in a recess of a substrate by repeating forming an adsorption layer on the substrate by supplying a silicon-containing gas and causing plasma of a reaction gas to react with the adsorption layer by generating the plasma of t...