ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,331, issued on June 17, was assigned to Tokyo Electron Ltd. (Tokyo).
"Substrate processing method and plasma processing apparatus" was invented by Takayuki Katsunuma (Miyagi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A substrate processing method includes step (a) of adsorbing a precursor on a side wall surface of a substrate where the side wall surface defines a recess in the substrate. The substrate processing method further includes step (b) of supplying a first chemical species and a second chemical species to the substrate. The first chemical species forms a film from the precursor on the side wall surface, and the second chemical sp...