US Patent Issued to Tokyo Electron on June 17 for "Plasma processing apparatus and plasma processing method" (Japanese, South Korean Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,313, issued on June 17, was assigned to Tokyo Electron Ltd. (Tokyo).

"Plasma processing apparatus and plasma processing method" was invented by Hwajun Jung (Hwaseong-si, South Korea), Mitsunori Ohata (Miyagi, Japan), Yuki Hosaka (Miyagi, Japan) and Wan Sung Jin (Miyagi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma processing apparatus includes a plasma processing chamber, a substrate support disposed in the plasma processing chamber, an annular baffle plate disposed so as to surround the substrate support, the annular baffle plate having a plurality of openings, a first annular plate disposed below the annular baffle plate, a second...