ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,305, issued on June 17, was assigned to Tokyo Electron Ltd. (Tokyo).
"Plasma processing apparatus" was invented by Chishio Koshimizu (Miyagi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A disclosed plasma processing apparatus includes a substrate support. The substrate support has a first region configured to support a substrate and a second region configured to support an edge ring. The first electrode is provided in the first region. The second electrode is provided in the second region. The first bias power source is connected to the first electrode via the first circuit. The second bias power source is connected to the second electrode ...