ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,356, issued on June 17, was assigned to Tokyo Electron Ltd. (Tokyo).
"Plasma etching tools and systems" was invented by Minjoon Park (Watervliet, N.Y.) and Andrew Metz (Albany, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of processing a substrate that includes: loading the substrate into a plasma etch chamber, the substrate including a patterned hard mask layer and an underlying layer, the plasma etch chamber including: a chamber part having a surface including a refractory metal; and a first electrode; flowing a process gas into the plasma etch chamber; while flowing the process gas, applying a source power to the first electrode o...