US Patent Issued to Tokyo Electron on June 17 for "Method for patterning a substrate using photolithography" (New York Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,391, issued on June 17, was assigned to Tokyo Electron Ltd. (Tokyo).

"Method for patterning a substrate using photolithography" was invented by Katie Lutker-Lee (Albany, N.Y.), Angelique Raley (Albany, N.Y.) and Nicholas Joy (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for patterning a substrate includes: forming a first photoresist etch mask with an extreme ultraviolet (EUV) lithography process, the first photoresist etch mask including first through openings, the first photoresist etch mask including a metal-based photoresist material; forming a second photoresist etch mask over the first photoresist etch mask, the second ...