US Patent Issued to Tokyo Electron on June 17 for "Metal oxide resists for EUV patterning and methods for developing the same" (New York Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,332,568, issued on June 17, was assigned to Tokyo Electron Ltd. (Tokyo).

"Metal oxide resists for EUV patterning and methods for developing the same" was invented by Hamed Hajibabaeinajafabadi (Albany, N.Y.) and Akiteru Ko (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for processing a substrate includes forming a metal oxide resist over the substrate, exposing the metal oxide resist to an extreme ultraviolet light pattern, and flowing a selective gas over the metal oxide resist. The selective gas increases a selectivity of the exposed metal oxide resist to a developing gas. The method further includes flowing the developing gas o...