US Patent Issued to Tokyo Electron on June 17 for "High performance new channel materials precision aligned 3D CFET device architecture" (New York Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,270, issued on June 17, was assigned to Tokyo Electron Ltd. (Tokyo).

"High performance new channel materials precision aligned 3D CFET device architecture" was invented by Mark I. Gardner (Albany, N.Y.) and H. Jim Fulford (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor device is described. The method includes forming a first complementary field effect transistor. The first complementary field effect transistor has a first transistor of a first conductivity type, and a second transistor of a second conductivity above the first transistor. The first transistor includes a first gate electrode, a f...