US Patent Issued to Tokyo Electron on July 8 for "Plasma processing method and plasma processing apparatus" (Japanese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,354,837, issued on July 8, was assigned to Tokyo Electron Ltd. (Tokyo).

"Plasma processing method and plasma processing apparatus" was invented by Takahiro Yonezawa (Miyagi, Japan), Takayuki Katsunuma (Miyagi, Japan), Shinya Ishikawa (Miyagi, Japan), Koki Tanaka (Miyagi, Japan) and Sho Kumakura (Miyagi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma processing method includes: providing a substrate including a silicon-containing film and a mask film having an opening pattern, on a substrate support; and etching the silicon-containing film using the mask film as a mask, with a plasma generated by a plasma generator provided in the chamber. ...