US Patent Issued to Tokyo Electron on July 8 for "Methods for forming high performance three dimensionally stacked transistors based on dielectric nano sheets" (New York Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,706, issued on July 8, was assigned to Tokyo Electron Ltd. (Tokyo).

"Methods for forming high performance three dimensionally stacked transistors based on dielectric nano sheets" was invented by H. Jim Fulford (Albany, N.Y.) and Mark I. Gardner (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device including one or more transistors with nano sheets stacked along a vertical direction, and a method of fabricating the device are disclosed herein. In some embodiments, a device includes a transistor structure including at least a first dielectric nano sheet and a second dielectric nano sheet. The first dielectric nano sheet and the second d...