ALEXANDRIA, Va., July 9 -- United States Patent no. 12,354,853, issued on July 8, was assigned to Tokyo Electron Ltd. (Tokyo).
"Etching method and plasma etching apparatus" was invented by Koki Tanaka (Miyagi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An etching method includes (a) providing a substrate including a carbon-containing film, the substrate being situated on a substrate support and (b) etching the substrate with a plasma to form an etching shape in the carbon-containing film, the plasma being configured to be formed from a gas containing H and O, the etching shape including a bottom. In (b), a temperature of the substrate support is adjusted to 0deg C. or less."
The patent was filed o...