US Patent Issued to Tokyo Electron on July 22 for "Substrate processing method and substrate processing apparatus" (Japanese Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,368,027, issued on July 22, was assigned to Tokyo Electron Ltd. (Tokyo).

"Substrate processing method and substrate processing apparatus" was invented by Takatoshi Orui (Miyagi, Japan), Ryutaro Suda (Miyagi, Japan), Yoshihide Kihara (Miyagi, Japan), Maju Tomura (Miyagi, Japan) and Kae Kumagai (Miyagi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A substrate processing method comprising: providing a substrate having a silicon-containing dielectric film in the substrate support; and generating plasma from a processing gas including a hydrogen- and fluorine-containing gas to etch the silicon-containing dielectric film, wherein the etching step comp...