US Patent Issued to Tokyo Electron on July 15 for "Plasma processing method and substrate processing apparatus" (Japanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,362,142, issued on July 15, was assigned to Tokyo Electron Ltd. (Tokyo).

"Plasma processing method and substrate processing apparatus" was invented by Takashi Chiba (Iwate, Japan), Jun Sato (Iwate, Japan) and Takeshi Kobayashi (Iwate, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "With respect to a plasma processing method of depositing a nitride film on a substrate by using plasma, the plasma processing method includes (a) supplying a plasma processing gas that includes a nitrogen-containing gas to a plasma processing space inside a processing container, and (b) supplying high-frequency power from a high-frequency power supply to an antenna dispo...