US Patent Issued to Tokyo Electron on July 15 for "Plasma processing apparatus and method for controlling source frequency of source radio-frequency power" (Japanese Inventor)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,362,144, issued on July 15, was assigned to Tokyo Electron Ltd. (Tokyo).

"Plasma processing apparatus and method for controlling source frequency of source radio-frequency power" was invented by Chishio Koshimizu (Miyagi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma processing apparatus includes a chamber, a substrate support, a radio-frequency power supply, and a bias power supply. The radio-frequency power supply generates source radio-frequency power to generate plasma in the chamber. The bias power supply provides a pulse of bias energy to a bias electrode in each of a plurality of pulse periods. The radio-frequency power supply set...