US Patent Issued to Tokyo Electron on July 15 for "2D material to integrate 3D horizontal nanosheets using a carrier nanosheet" (New York Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,956, issued on July 15, was assigned to Tokyo Electron Ltd. (Tokyo).

"2D material to integrate 3D horizontal nanosheets using a carrier nanosheet" was invented by H. Jim Fulford (Albany, N.Y.) and Mark I. Gardner (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "One or more 3D transistor structures that use one or more 2D materials as transistor channels along with methods for fabricating the same are disclosed. A 3D transistor can include a first carrier nanosheet at least partially surrounded by a first 2D material and a second carrier nanosheet at least partially surrounded by a second 2D material. The transistor can include a first so...