ALEXANDRIA, Va., July 3 -- United States Patent no. 12,344,933, issued on July 1, was assigned to Tokyo Electron Ltd. (Tokyo).
"SiN film embedding method" was invented by Munehito Kagaya (Yamanashi, Japan) and Yusuke Suzuki (Yamanashi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A SiN film embedding method includes: an operation of adsorbing an aminosilane-based precursor inside a recess formed on a surface of a substrate; an operation of forming a SiN film inside the recess by plasmarizing and supplying a nitrogen gas into the recess to nitride the aminosilane-based precursor; and an operation of forming an adsorption-inhibiting region for the aminosilane-based precursor on an upper portion inside ...