ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,434, issued on July 1, was assigned to Tokyo Electron Ltd. (Tokyo).
"Manufacturing method for semiconductor device" was invented by Koji Akiyama (Yamanashi, Japan), Chihiro Tamura (Yamanashi, Japan) and Philippe Gaubert (Yamanashi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A manufacturing method for a semiconductor device includes forming a dielectric film on a semiconductor substrate or on a lower electrode that is formed on a semiconductor substrate, attaching a metal to a predetermined area on a surface of the dielectric film selectively, forming a metal oxide film with an insulation property in the predetermined area on the surface of ...