US Patent Issued to Tokyo Electron on July 1 for "Epitaxial semiconductor 3D horizontal nano sheet with high mobility 2D material channel" (New York Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,424, issued on July 1, was assigned to Tokyo Electron Ltd. (Tokyo).

"Epitaxial semiconductor 3D horizontal nano sheet with high mobility 2D material channel" was invented by Mark I. Gardner (Albany, N.Y.), H. Jim Fulford (Albany, N.Y.) and Partha Mukhopadhyay (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods for the manufacture of semiconductor devices constructed with three-dimensional (3D) horizontal nano sheets with high mobility two-dimensional (2D) material channels are disclosed. Aspects can include forming a semiconductor material; selectively forming a seed material around the bridge; selectively forming a two-dimensional (...