ALEXANDRIA, Va., July 3 -- United States Patent no. 12,344,930, issued on July 1, was assigned to Tokyo Electron Ltd. (Tokyo).
"Deposition method and deposition apparatus" was invented by Yuichi Furuya (Yamanashi, Japan), Kohichi Satoh (Yamanashi, Japan) and Masato Araki (Yamanashi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A deposition method performed using a deposition apparatus is provided. The deposition apparatus includes: a source line configured to supply Ru3(CO)12 contained in a raw material container into a chamber; a CO gas line configured to supply a CO gas into the raw material container; a bypass line connecting the source line and the CO gas line, and forming a line that does not pa...