US Patent Issued to Tokyo Electron on Jan. 28 for "Semiconductor manufacturing platform with in-situ electrical bias and methods thereof" (American, Irish Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,907, issued on Jan. 28, was assigned to Tokyo Electron Ltd. (Tokyo).

"Semiconductor manufacturing platform with in-situ electrical bias and methods thereof" was invented by Dina H. Triyoso (Albany, N.Y.), Robert D. Clark (Fremont, Calif.), David Hurley (Santry, Ireland) and Ian Colgan (Santry, Ireland).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a semiconductor device includes placing a semiconductor wafer into a first deposition chamber of a manufacturing platform, the semiconductor wafer comprising a first conductive layer, depositing a dielectric layer on the first conductive layer in the first deposition chamber, placin...