ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,911, issued on Jan. 28, was assigned to Tokyo Electron Ltd. (Tokyo).
"Recessed contact structures and methods" was invented by Andrew Metz (Albany, N.Y.), Caitlin Philippi (Albany, N.Y.) and Sophie Thibaut (Allbany, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "An exemplary method of forming a semiconductor device includes forming, in a substrate, an active region protruding vertically from a major surface of the substrate, the active region including a semiconductor source-drain (S/D) region and a first 3-D channel structure, the S/D region physically contacting the first 3-D channel structure, and forming an opening extending into the S/D re...