US Patent Issued to Tokyo Electron on Jan. 27 for "Plasma processing method and plasma processing apparatus" (Japanese Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,537,172, issued on Jan. 27, was assigned to Tokyo Electron Ltd. (Tokyo).

"Plasma processing method and plasma processing apparatus" was invented by Koichi Nagami (Miyagi, Japan), Kazunobu Fujiwara (Miyagi, Japan), Tatsuro Ohshita (Miyagi, Japan), Takashi Dokan (Miyagi, Japan), Koji Maruyama (Miyagi, Japan), Kazuya Nagaseki (Miyagi, Japan) and Shinji Himori (Miyagi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A decrease of an etching rate of a substrate can be suppressed, and energy of ions irradiated to an inner wall of a chamber main body can be reduced. A plasma processing apparatus includes a DC power supply configured to generate a negative...