US Patent Issued to Tokyo Electron on Jan. 27 for "Methods for fabricating isolation structures using directional beam process" (New York Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,560, issued on Jan. 27, was assigned to Tokyo Electron Ltd. (Tokyo).

"Methods for fabricating isolation structures using directional beam process" was invented by Soo Doo Chae (Albany, N.Y.), Matthew Baron (Albany, N.Y.), Hojin Kim (Albany, N.Y.) and Sunghil Lee (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating semiconductor devices is disclosed. The method includes forming, on a first side of a substrate, a first stack and a second stack. The method includes etching, from the first side, a portion of the substrate interposed between the first and second stacks to form a recess. The method includes filling the rec...