US Patent Issued to Tokyo Electron on Jan. 27 for "Film formation method" (Japanese Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,504, issued on Jan. 27, was assigned to Tokyo Electron Ltd. (Tokyo).

"Film formation method" was invented by Koji Akiyama (Nirasaki, Japan), Hajime Nakabayashi (Nirasaki, Japan), Akinobu Kakimoto (Nirasaki, Japan), Nobutake Kabuki (Nirasaki, Japan), Yumiko Kawano (Nirasaki, Japan) and Sara Otsuki (Nirasaki, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "This film formation method comprises: a first film formation step; a second film formation step; and a third film formation step. In the first film formation step, a dielectric film is formed on a first conductive film. In the second film formation step, a metal oxide film is formed on the diel...