US Patent Issued to Tokyo Electron on Jan. 27 for "Etching method, plasma processing apparatus, and processing system" (Japanese Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,537,159, issued on Jan. 27, was assigned to Tokyo Electron Ltd. (Tokyo).

"Etching method, plasma processing apparatus, and processing system" was invented by Daisuke Nishide (Miyagi, Japan), Toru Hisamatsu (Miyagi, Japan) and Shinya Ishikawa (Miyagi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An etching method includes: providing a substrate having a film and a patterned mask on the film; forming a silicon-containing layer including silicon, carbon, and nitrogen on the substrate using a precursor gas containing silicon; and performing a plasma etching on the film. The substrate is placed under a depressurized environment for a time period from...