US Patent Issued to Tokyo Electron on Jan. 27 for "3D high density self-aligned nanosheet device formation with efficient layout and design" (Florida, Texas Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,520, issued on Jan. 27, was assigned to Tokyo Electron Ltd. (Tokyo).

"3D high density self-aligned nanosheet device formation with efficient layout and design" was invented by Mark I. Gardner (Cedar Creek, Texas), H. Jim Fulford (Marianna, Fla.) and Partha Mukhopadhyay (Oviedo, Fla.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of microfabrication includes forming an initial stack of semiconductor layers by epitaxial growth over a substrate. The initial stack of semiconductor layers is surrounded by a sidewall structure. The initial stack of semiconductor layers includes channel structures and sacrificial gate layers stacked alternatingly ...