US Patent Issued to Tokyo Electron on Jan. 20 for "Substrate processing apparatus, raw material cartridge, substrate processing method, and raw material cartridge manufacturing method" (Japanese Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,529,138, issued on Jan. 20, was assigned to Tokyo Electron Ltd. (Tokyo).

"Substrate processing apparatus, raw material cartridge, substrate processing method, and raw material cartridge manufacturing method" was invented by Muneo Harada (Osaka, Japan) and Tsuneyuki Okabe (Yamanashi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A substrate processing apparatus includes: a chamber; and a processing gas supply unit connected to the chamber via a processing gas supply flow path and configured to supply a processing gas. The processing gas supply unit includes a raw material cartridge that includes a raw material tank that accommodates a porous membe...