ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,531,207, issued on Jan. 20, was assigned to Tokyo Electron Ltd. (Tokyo).
"Plasma processing system and plasma processing method" was invented by Atsuki Kusunoki (Miyagi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma processing system includes a plasma processing chamber, a substrate support, a matching box, an RF power source, and a controller. The substrate support is disposed in the plasma processing chamber. The matching box is electrically connected to the substrate support. The RF power source is electrically connected to the matching box to generate a periodic RF pulse that includes a first power level, a second power level, and a ...