ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,681, issued on Jan. 20, was assigned to Tokyo Electron Ltd. (Tokyo).
"Etching method and plasma processing system" was invented by Maju Tomura (Miyagi, Japan), Yoshihide Kihara (Miyagi, Japan) and Masanobu Honda (Miyagi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A technique improves etch selectivity. An etching includes (a) providing, in a chamber, a substrate including an underlying film and a silicon-containing film on the underlying film, (b) etching the silicon-containing film to form a recess with first plasma generated from a first process gas containing a hydrogen fluoride gas until before the underlying film is exposed at the rece...