US Patent Issued to Tokyo Electron on Jan. 20 for "Barrier schemes for metallization using manganese and graphene" (California Inventor)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,719, issued on Jan. 20, was assigned to Tokyo Electron Ltd. (Tokyo).

"Barrier schemes for metallization using manganese and graphene" was invented by Robert D. Clark (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device includes providing a substrate having a patterned film including manganese; depositing a graphene layer over exposed surfaces of the patterned film; depositing a dielectric layer containing silicon and oxygen over the graphene layer; and heat-treating the substrate to form a manganese-containing diffusion barrier region between the graphene layer and the dielectric layer."

The pat...