ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,432, issued on Jan. 13, was assigned to Tokyo Electron Ltd. (Tokyo).
"Plasma processing apparatus and plasma processing method" was invented by Hiroyuki Matsuura (Iwate, Japan), Nobuo Matsuki (Yamanashi, Japan) and Taro Ikeda (Yamanashi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma processing apparatus includes a processing container having an opening in a sidewall, a partition wall that covers the opening and forms an internal space communicating with an inside of the processing container, an internal electrode that passes through the partition wall, is detachably and airtightly inserted into the internal space, and is supplied wit...