US Patent Issued to Tokyo Electron on Jan. 13 for "Apparatus for plasma processing and method of etching" (Japanese Inventor)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,439, issued on Jan. 13, was assigned to Tokyo Electron Ltd. (Tokyo).

"Apparatus for plasma processing and method of etching" was invented by Chishio Koshimizu (Miyagi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an apparatus for plasma processing according to an exemplary embodiment, a radio frequency power source generates radio frequency power which is supplied for generation of a plasma. A bias power source supplies bias power to a lower electrode of a substrate support. The bias power varies a potential of a substrate within a cycle thereof. The radio frequency power is supplied in at least a part of a first period in the cycle, in w...