US Patent Issued to Tokyo Electron on Feb. 4 for "Substrate processing method and substrate processing device" (Japanese Inventors)

ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,215,417, issued on Feb. 4, was assigned to Tokyo Electron Ltd. (Tokyo).

"Substrate processing method and substrate processing device" was invented by Satoshi Toda (Nirasaki, Japan) and Tetsuro Takahashi (Nirasaki, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A predetermined process is performed on two target substrates using a substrate processing device that includes two processing parts for performing a substrate process on each of the two target substrates, a gas supply mechanism for separately supplying gases to the two processing parts, and a common exhaust mechanism for collectively exhausting the gases inside the two processing parts. A fi...