US Patent Issued to Tokyo Electron on Feb. 4 for "Method of etching film and plasma processing apparatus" (Japanese, American Inventors)

ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,217,973, issued on Feb. 4, was assigned to Tokyo Electron Ltd. (Tokyo).

"Method of etching film and plasma processing apparatus" was invented by Kosuke Ogasawara (Miyagi, Japan), Takahisa Iwasaki (Hillsboro, Ore.), Kentaro Ishii (Miyagi, Japan), Seiji Ide (Miyagi, Japan) and Chiju Hsieh (Hillsboro, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of etching a film of a substrate is provided. The substrate includes an underlying region, the film and a mask. The film is provided on the underlying region. The mask is provided on the film. The method comprises performing main etching on the film. The main etching is plasma etching of the film and...