US Patent Issued to Tokyo Electron on Feb. 3 for "Selective film formation using self-assembled monolayer" (Japanese, South Korean Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,540,394, issued on Feb. 3, was assigned to Tokyo Electron Ltd. (Tokyo).

"Selective film formation using self-assembled monolayer" was invented by Shuji Azumo (Yamanashi, Japan), Shinichi Ike (Gyeonggi-do, South Korea), Yumiko Kawano (Yamanashi, Japan) and Hiroki Murakami (Yamanashi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A film forming method includes: a preparation process of preparing a substrate having a surface from which a first film without containing silicon and a second film are exposed; a first film formation process of forming a self-assembled monolayer, which has a fluorine-containing functional group and inhibits formation of a ...