US Patent Issued to Tokyo Electron on Feb. 3 for "Plasma processing apparatus and plasma processing method" (Japanese Inventor)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,542,255, issued on Feb. 3, was assigned to Tokyo Electron Ltd. (Tokyo).

"Plasma processing apparatus and plasma processing method" was invented by Chishio Koshimizu (Miyagi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma processing apparatus disclosed herein includes a substrate support provided in a chamber; a radio-frequency power supply configured to supply radio-frequency power to generate plasma in the chamber; and a bias power supply configured to supply electric bias energy to an electrode to draw ions into a substrate on the substrate support. The electric bias energy has a cycle having a time length reciprocal to a bias frequency....