US Patent Issued to Tokyo Electron on Feb. 3 for "Patterning method using secondary resist surface functionalization for mask formation" (New York Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,542, issued on Feb. 3, was assigned to Tokyo Electron Ltd. (Tokyo).

"Patterning method using secondary resist surface functionalization for mask formation" was invented by Charlotte Cutler (Albany, N.Y.) and David Conklin (Saratoga Springs, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of patterning a substrate includes exposing a photoresist layer on the substrate with a pattern of actinic radiation to form a chemically reactive surface pattern, and coating, at the track system, a spin-on-material to convert the chemically reactive surface pattern to a photoresist surface mask pattern. The method further includes etching the photoresi...