US Patent Issued to Tokyo Electron on Feb. 25 for "Method for filling recessed features in semiconductor devices with a low-resistivity metal" (New York Inventors)

ALEXANDRIA, Va., Feb. 26 -- United States Patent no. 12,237,216, issued on Feb. 25, was assigned to Tokyo Electron Ltd. (Tokyo).

"Method for filling recessed features in semiconductor devices with a low-resistivity metal" was invented by Kai-Hung Yu (Albany, N.Y.), Shihsheng Chang (Albany, N.Y.), Ying Trickett (Albany, N.Y.), Eric Chih-Fang Liu (Albany, N.Y.), Yun Han (Albany, N.Y.), Henan Zhang (Albany, N.Y.), Cory Wajda (Albany, N.Y.), Robert D. Clark (Albany, N.Y.), Gerrit J. Leusink (Albany, N.Y.), Gyanaranjan Pattanaik (Albany, N.Y.) and Hiroaki Niimi (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for filling recessed features with a low-resistivity metal. The method includes prov...