ALEXANDRIA, Va., Feb. 26 -- United States Patent no. 12,237,172, issued on Feb. 25, was assigned to Tokyo Electron Ltd. (Tokyo).
"Etch process for oxide of alkaline earth metal" was invented by Du Zhang (Albany, N.Y.), Christophe Vallee (Albany, N.Y.) and Mingmei Wang (Albany, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of processing a substrate that includes: loading the substrate in a plasma processing chamber, the substrate having a surface including an oxide, the oxide including an alkaline earth metal; flowing a process gas including CCl4 into the plasma processing chamber; in the plasma processing chamber, forming a fluorine-free plasma from the process gas by applying a source power t...