ALEXANDRIA, Va., Feb. 26 -- United States Patent no. 12,237,167, issued on Feb. 25, was assigned to Tokyo Electron Ltd. (Tokyo).
"Deposition method" was invented by Ken Okoshi (Yamanashi, Japan), Yamato Tonegawa (Yamanashi, Japan) and Keiji Tabuki (Yamanashi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "With respect to a method of depositing a silicon nitride film on a surface of a substrate, the method includes depositing the silicon nitride film on the surface of the substrate by intermittently supplying trisilylamine into a processing chamber accommodating the substrate."
The patent was filed on Jan. 20, 2022, under Application No. 17/648,438.
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