US Patent Issued to Tokyo Electron on Feb. 18 for "Ruthenium film forming method and substrate processing system" (Japanese Inventor)

ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,227,841, issued on Feb. 18, was assigned to Tokyo Electron Ltd. (Tokyo).

"Ruthenium film forming method and substrate processing system" was invented by Tadahiro Ishizaka (Nirasaki, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A ruthenium film forming method includes: causing chlorine to be adsorbed to an upper portion of a recess at a higher density than to a lower portion of the recess by supplying a chlorine-containing gas to a substrate including an insulating film and having the recess; and forming a ruthenium film in the recess by supplying a Ru-containing precursor to the recess to which the chlorine is adsorbed."

The patent was filed on...