ALEXANDRIA, Va., Feb. 12 -- United States Patent no. 12,224,281, issued on Feb. 11, was assigned to Tokyo Electron Ltd. (Tokyo).

"Interdigitated device stack" was invented by Lars Liebmann (Mechanicsville, N.Y.), Jeffrey Smith (Clifton Park, N.Y.), Daniel Chanemougame (Niskayuna, N.Y.), Paul Gutwin (Williston, Vt.), Brian Cline (Austin, Texas), Xiaoqing Xu (Austin, Texas) and David Pietromonaco (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first pair of transistors over a substrate. The first pair of transistors includes a first transistor having a first gate structure over the substrate and a second transistor having a second gate structure stacked over t...