US Patent Issued to Tokyo Electron on Dec. 9 for "High performance 3D compact transistor architecture" (New York Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,604, issued on Dec. 9, was assigned to Tokyo Electron Ltd. (Tokyo).

"High performance 3D compact transistor architecture" was invented by H. Jim Fulford (Albany, N.Y.) and Mark I. Gardner (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices and corresponding methods of manufacturing the same are disclosed. For example, a plurality of first semiconductor channels vertically spaced from one another and a plurality of second semiconductor channels vertically spaced from one another, wherein different materials are simultaneously epitaxial-grown for the first semiconductor channels and the second semiconductor channels, can ...