US Patent Issued to Tokyo Electron on Dec. 9 for "Extreme ultraviolet lithography patterning method" (Japanese, American Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,494,369, issued on Dec. 9, was assigned to Tokyo Electron Ltd. (Tokyo).

"Extreme ultraviolet lithography patterning method" was invented by Choong-Man Lee (Nirasaki, Japan), Soo Doo Chae (Albany, N.Y.), Angelique Raley (Albany, N.Y.), Qiaowei Lou (Albany, N.Y.), Toshio Hasegawa (Nirasaki, Japan) and Yoshihiro Kato (Nirasaki, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a semiconductor device is described that includes forming a base layer over a top layer of a substrate, the base layer includes a silicon based dielectric having a thickness less than or equal to 5 nm and greater than or equal to 0.5 nm; forming a photoresi...