US Patent Issued to Tokyo Electron on Dec. 9 for "Atomic layer deposition of aluminum oxide films for semiconductor devices using an aluminum alkoxide oxidizer" (New York Inventor)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,494,362, issued on Dec. 9, was assigned to Tokyo Electron Ltd. (Tokyo).

"Atomic layer deposition of aluminum oxide films for semiconductor devices using an aluminum alkoxide oxidizer" was invented by Kandabara N. Tapily (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Method for gas phase atomic layer deposition (ALD) of aluminum oxide films on patterned substrates using a waterless oxidizer that includes an aluminum alkoxide gas. The method includes providing a substrate containing a dielectric layer and a metal layer or a semiconductor layer, and selectively depositing an aluminum oxide film on a surface of the dielectric layer relative to ...