US Patent Issued to Tokyo Electron on Dec. 30 for "Surface modification to achieve selective isotropic etch" (New York Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,327, issued on Dec. 30, was assigned to Tokyo Electron Ltd. (Tokyo).

"Surface modification to achieve selective isotropic etch" was invented by Jonathan Hollin (Albany, N.Y.), Matthew Flaugh (Albany, N.Y.), Subhadeep Kal (Albany, N.Y.) and Aelan Mosden (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A surface of a substrate is modified, where the substrate includes at least two different layers or films of different materials. The modified layer is then selectively converted to a protection layer on one of the layers, while the other layer is etched."

The patent was filed on Sept. 15, 2022, under Application No. 17/945,897.

*For furth...