US Patent Issued to Tokyo Electron on Dec. 30 for "Substrate processing method and plasma processing apparatus" (Japanese, American Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,330, issued on Dec. 30, was assigned to Tokyo Electron Ltd. (Tokyo).

"Substrate processing method and plasma processing apparatus" was invented by Shinya Ishikawa (Miyagi, Japan) and Toru Hisamatsu (Hillsboro, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An apparatus for processing a substrate for processing a substrate includes: one or more processing chambers, a plasma generator, and a controller. The controller causes (a) providing a substrate having an etching region and a patterned region on the etching region; (b) forming an organic film on a surface of the substrate; and (c) etching the etching region through the patterned region using...