US Patent Issued to Tokyo Electron on Dec. 30 for "Film deposition method and film deposition apparatus" (Japanese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,509,766, issued on Dec. 30, was assigned to Tokyo Electron Ltd. (Tokyo).

"Film deposition method and film deposition apparatus" was invented by Yohei Matsuyama (Yamanashi, Japan), Daichi Ito (Yamanashi, Japan) and Takeshi Oyama (Miyagi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A film deposition method includes forming a seed layer containing silicon atoms and nitrogen atoms on a metal film of a substrate by supplying a first silicon-containing gas and a first nitriding gas to the substrate in a state where the substrate is maintained at a first temperature; and forming a bulk layer containing silicon atoms and nitrogen atoms on the seed laye...